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High overpressure
The MDT series is made of high-purity single-crystal silicon, and its properties are superior to those of composite silicon and diffused silicon commonly used in the market. The membrane surface and the base are bonded at the atomic level of silicon-silicon, which provides better static pressure and overpressure characteristics.At the same time, add μm Inert material suspension layer in the induction layer and base layer to reduce the impact of stress, and improve the insulation characteristics.
High temperature suppression
The MDT series adopts the classic Wheatstone bridge principle, but innovatively adopts double Wheatstone bridges in the bridge design to realize "double beams" on the bridge. The temperature characteristics of the bridge resistance of the double-girder bridge are complementary. When the self-heating change or noise interference occurs in the bridge, the double-girder bridge realizes self-compensation, which greatly improves the anti-interference ability and long-term stability of the chip. MEMS silicon sensor chips all require a metallization process to lead out the internal leads of the bridge resistance and form a certain area of metal binding area. This metal wire and metal binding area will also have a stress impact on the silicon sensing film surface. MDT adopts a fully symmetrical "plum mirror" metallization layout, and lays out the metallized part on the edge of the chip. When the temperature and pressure change, the metallized part changes evenly and symmetrically. The bridge resistor with a resistance value of 10kΩ can effectively control the influence of temperature and ensure a high signal-to-noise ratio of the output signal.。
High stabilityThe MDT series has high stability, and the zero-point pressure signal of the sensor is continuously collected for 1000 hours at room temperature. Note that at 200 hours and 650 hours only data logging is interrupted, there is no change in power and ambient temperature.
The leakage current of MDT series is 100nA@10V, the offset voltage is ±3mV/V (the mainstream chip in the market is ±10mV/V), the TCR is 800ppm (the mainstream chip in the market is 2600ppm), the bridge resistance is 10KΩ, and the sensitivity is within the design range, It can reach (20±5) mV/V, non-linearity <0.15%FS, when 4 times the design range pressure is applied, the sensitivity can reach 80mV/V, non-linearity <0.8%FS.
